Electrical Characteristics T
A
= 25 o C unless otherwise noted
Symbol
Parameter
Conditions
Typ e
Min
Typ
Max
Units
ON CHARACTERISTICS Continued (Note 1)
I D(ON)
On-State Drain Current
V GS = 4.5 V, V DS = 10 V
2N7000
75
600
mA
V GS = 10 V, V DS > 2 V DS(on)
V GS = 10 V, V DS > 2 V DS(on)
2N7002
NDS7002A
500
500
2700
2700
g FS
Forward Transconductance
V DS = 10 V, I D = 200 mA
2N7000
100
320
mS
V DS > 2 V DS(on) , I D = 200 mA
V DS > 2 V DS(on) , I D = 200 mA
2N7002
NDS7002A
80
80
320
320
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
t on
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DD = 15 V, R L = 25 ? ,
All
All
All
2N7000
20
11
4
50
25
5
10
pF
pF
pF
ns
I D = 500 mA, V GS = 10 V,
R GEN = 25
V DD = 30 V, R L = 150 ? ,
I D = 200 mA, V GS = 10 V,
R GEN = 25 ?
2N700 2
NDS7002A
20
t off
Turn-Off Time
V DD = 15 V, R L = 25 ? ,
2N7000
10
ns
I D = 500 mA, V GS = 10 V,
R GEN = 25
V DD = 30 V, R L = 150 ? ,
I D = 200 mA, V GS = 10 V,
R GEN = 25 ?
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
2N700 2
NDS7002 A
20
I S
Maximum Continuous Drain-Source Diode Forward Current
2N7002
115
mA
NDS7002A
280
I SM
Maximum Pulsed Drain-Source Diode Forward Current
2N7002
0.8
A
NDS7002A
1.5
V SD
Drain-Source Diode Forward
Voltage
V GS = 0 V, I S = 115 mA (Note 1)
V GS = 0 V, I S = 400 mA (Note 1)
2N7002
NDS7002 A
0.88
0.88
1.5
1.2
V
Note:
1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
相关PDF资料
2N7002A-7 MOSFET N CH 60V 180MA SOT23
2N7002DW-7 MOSFET N-CHANEL DUAL 60V SOT-363
2N7002DW MOSFET N CH DL 60V 115MA SC70-6
2N7002E-7-F MOSFET N-CH 60V 240MA SOT23-3
2N7002ET3G MOSFET N-CH 60V 260MA SOT-23
2N7002K-7 MOSFET N-CH 60V 300MA SOT23-3
2N7002KT3G MOSFET N-CH 60V 320MA SOT-23
2N7002KW MOSFET N-CH 60V 310MA SOT323
相关代理商/技术参数
2N7002-01 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002-13-F 制造商:Zetex / Diodes Inc 功能描述:Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R 制造商:DIODES 功能描述:N-CHANNEL MOSFET/ SOT-23
2N7002215 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 300MA 3-SOT-23
2N7002-215 制造商:NXP Semiconductors 功能描述:2N7002-215
2N70027 制造商:Diodes Incorporated 功能描述: 制造商:Vishay Intertechnologies 功能描述:
2N7002-7 功能描述:MOSFET 60V 200mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002-7-12-F 制造商:DIODES 功能描述:N-CHANNEL MOSFET/ SOT-23
2N70027F 制造商:Diodes Incorporated 功能描述: